Pb Free Plating Product
ISSUED DATE :2006/01/05
REVISED DATE :
GU88LS02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
25V
5m
75A
Description
The GU88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast
switching performance.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Features
Package Dimensions
REF.
A
b
L4
c
L3
L1
E
Millimeter
REF.
Min.
Max.
4.40
4.80
c2
0.76
1.00
b2
0.00
0.30 B D
0.36
0.5
e
1.50 REF.
L
2.29
2.79
9.80
10.4
L2
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
8.6
9.0
2.54 REF.
14.6
15.8
0˚
8˚
1.27 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V
Continuous Drain Current, V
GS
@4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
Tj, Tstg
Ratings
25
±20
75
62.5
350
96
0.75
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
:
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
Value
1.3
62
Unit
:
/W
: /W
GU88LS02
Page: 1/4
GTM [ GTM CORPORATION ]
