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1F7G 参数 Datasheet PDF下载

1F7G图片预览
型号: 1F7G
PDF下载: 下载PDF文件 查看货源
内容描述: 快速恢复玻璃钝化结整流电压: 50〜 1000V电流: 1.0A [FAST RECOVERY GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A]
分类和应用: 二极管快速恢复二极管
文件页数/大小: 2 页 / 146 K
品牌: GULFSEMI [ GULF SEMICONDUCTOR ]
 浏览型号1F7G的Datasheet PDF文件第2页  
1F1G THRU 1F7G  
FAST RECOVERY GLASS PASSIVATED  
JUNCTION RECTIFIER  
VOLTAGE: 50 TO 1000V  
CURRENT: 1.0A  
R-1  
FEATURE  
Molded case feature for auto insertion  
High current capability  
Low leakage current  
High surge capability  
High temperature soldering guaranteed  
250°C /10sec/0.375" lead length at 5 lbs tension  
Glass Passivated chip  
MECHANICAL DATA  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Case: Molded with UL-94 Class V-0 recognized Flame  
Retardant Epoxy  
Polarity: color band denotes cathode  
Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,  
for capacitive load, derate current by 20%)  
SYMBOL  
1F  
1G  
50  
1F  
2G  
100  
1F  
3G  
1F  
4G  
1F  
5G  
1F  
6G  
1F  
7G  
units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
35  
50  
70  
Maximum DC blocking Voltage  
100  
1000  
Maximum Average Forward Rectified  
Current 3/8" lead length at Ta =50°C  
Peak Forward Surge Current 8.3ms single  
Half sine-wave superimposed on rated load  
Maximum Instantaneous Forward Voltage at  
rated forward current  
If(av)  
Ifsm  
Vf  
1.0  
30.0  
1.3  
A
A
V
Maximum full load reverse current  
full cycle at TL =75°C  
Ir(av)  
30.0  
µA  
5.0  
100.0  
15.0  
µ
µ
A
A
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25°C  
Ta =100°C  
Ir  
Typical Junction Capacitance  
(Note 1)  
Cj  
Trr  
pF  
nS  
Maximum Reverse Recovery Time (Note 2)  
Operating Temperature (Note 3)  
Storage and Operation Junction Temperature  
150  
250  
500  
R(ja)  
Tstg, Tj  
50.0  
°C /W  
°C  
-55 to +150  
Note:  
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc  
2. Test Condition If =0.5A, Ir =1.0A, Irr =0.25A  
3. Thermal Resistance from Junction to Ambient at 0.375" lead length, P.C. Board Mounted  
Rev.4  
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