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1N5061 参数 Datasheet PDF下载

1N5061图片预览
型号: 1N5061
PDF下载: 下载PDF文件 查看货源
内容描述: 烧结玻璃结雪崩整流电压: 600V到800V电流: 2.0A [SINTERED GLASS JUNCTION AVALANCHE RECTIFIER VOLTAGE:600V to 800V CURRENT: 2.0A]
分类和应用: 二极管测试局域网
文件页数/大小: 2 页 / 66 K
品牌: GULFSEMI [ GULF SEMICONDUCTOR ]
 浏览型号1N5061的Datasheet PDF文件第2页  
1N5061 THRU 1N5062
SINTERED GLASS JUNCTION
AVALANCHE RECTIFIER
VOLTAGE:600V to 800V
CURRENT: 2.0A
FEATURE
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
SOD-57
MECHANICAL DATA
Case: SOD-57 sintered glass case
Terminal: Plated axial leads solderable per MIL-STD 202E,
method 208C
Polarity: color band denotes cathode end
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8”lead length at Ttp =45°C
Peak Forward Surge Current at t=10ms half sinewave
Maximum Forward Voltage at rated Forward Current
at 1.0A
Maximum DC Reverse Current
at rated DC blocking voltage
Typical Reverse Recovery Time
Diode capacitance at0V,1MHz
Typical Thermal Resistance
Storage and Operating Junction Temperature
(Note 2)
Ta =25°C
Ta =165°C
(Note 1)
1N5061
600
420
600
2.0
50
1.0
1.0
150.0
3000
50
100
-65 to +175
1N5062
800
560
800
units
V
V
V
A
A
V
V
RRM
V
RMS
V
DC
I
FAV
I
FSM
V
F
I
R
Trr
Cd
R
th(ja)
Tstg, Tj
µ
A
nS
pF
K/W
°C
Note:
1. Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
2.
Device mounted on epoxy-glass printed-circuit board, 1.5mm thick
Rev.A1
www.gulfsemi.com