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BYM26D 参数 Datasheet PDF下载

BYM26D图片预览
型号: BYM26D
PDF下载: 下载PDF文件 查看货源
内容描述: 烧结玻璃结快速雪崩整流电压: 800V电流: 2.3A [SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 800V CURRENT: 2.3A]
分类和应用: 二极管局域网非常快速的恢复二极管快速恢复二极管
文件页数/大小: 2 页 / 59 K
品牌: GULFSEMI [ GULF SEMICONDUCTOR ]
 浏览型号BYM26D的Datasheet PDF文件第2页  
BYM26D
SINTERED GLASS JUNCTION
FAST AVALANCHE RECTIFIER
VOLTAGE: 800V
CURRENT: 2.3A
FEATURE
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
SOD-64
MECHANICAL DATA
Case: SOD-64 sintered glass case
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Polarity: color band denotes cathode end
Mounting position: any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Reverse Breakdown Voltage
at I
R
= 0.1mA
Maximum Average Forward Rectified Current
and Ttp=55°C; lead length=10mm
Peak Forward Surge Current at t=10ms half
sine wave
Maximum Forward Voltage at Rated Forward
Current and 25°C
I
F
= 2.0A
Maximum DC Reverse Current
at rated DC blocking voltage
Maximum Reverse Recovery Time
Ta = 25°C
Ta = 150°C
(Note 1)
BYM26D
800
560
800
900min
2.3
45
2.65
10
150
75
10
75
75
-65 to +175
units
V
V
V
V
A
A
V
µA
nS
mJ
pF
K/W
V
RRM
V
RMS
V
DC
V
(BR)R
I
FAV
I
FSM
V
F
I
R
Trr
E
R
C
d
R
th(ja)
Tstg, Tj
Non Repetitive Reverse Avalanche Energy
Diode Capacitance at f=1MHz,V
R
=0V
Typical Thermal Resistance
(Note 2)
Storage and Operating Junction Temperature
Note:
1. Reverse Recovery Condition I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A
2. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick; thickness of Cu-layer≥40μm
Rev.A1
www.gulfsemi.com