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BYT56M 参数 Datasheet PDF下载

BYT56M图片预览
型号: BYT56M
PDF下载: 下载PDF文件 查看货源
内容描述: 烧结玻璃结快速雪崩整流电压: 1000V电流: 3.0A [SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE:1000V CURRENT: 3.0A]
分类和应用: 二极管功效局域网
文件页数/大小: 2 页 / 148 K
品牌: GULFSEMI [ GULF SEMICONDUCTOR ]
 浏览型号BYT56M的Datasheet PDF文件第2页  
BYT56M
SINTERED GLASS JUNCTION
FAST AVALANCHE RECTIFIER
VOLTAGE:1000V
CURRENT: 3.0A
FEATURE
Glass passivated
Hermetically sealed package
Low reverse current
Soft recovery characteristics
SOD-64
MECHANICAL DATA
Case: SOD-64 sintered glass case
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Polarity: color band denotes cathode end
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8”lead length at I =10mm
Peak Forward Surge Current
at tp=10ms,half sinewave
Maximum Forward Voltage at rated Forward Current
at IF=3.0A
Non-repetitive peak reverse avalanche energy
at I
BR(R)
=0.4A
Maximum DC Reverse Current
at rated DC blocking voltage
Maximum Reverse Recovery Time
Typical Thermal Resistance
Storage and Operating Junction Temperature
Ta =25
°C
Ta =150
°C
(Note 1)
(Note 2)
BYT56M
1000
700
1000
3.0
80
1.4
10
5.0
150.0
100
70
-55 to +175
units
V
V
V
A
A
V
mJ
V
RRM
V
RMS
V
DC
I
FAV
I
FSM
V
F
E
RSM
I
R
Trr
Rth(ja)
Tstg, Tj
µ
A
µ
A
nS
°C
/W
°C
Note:
1. Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
2. on PC board with spacing 25 mm
Rev.A1
www.gulfsemi.com