BYV28-1GE THRU BYV28-6GE
GLASS PASSIVATED JUNCTION
ULTRAFAST EFFICIENT SILICON RECTIFIER
VOLTAGE:600V
CURRENT:3.5A
DO-201AD
FEATURE
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Ideally suited for use in very high frequency switching
power supplies, inverters and as free wheeling diodes
• Ultra fast recovery time for high efficiency
• Excellent high temperature switching
• Glass passivated junction
• High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body over
passivated chip
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.045 oz., 1.2 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
BYV28-1GE
units
BYV28-2GE BYV28-4GE BYV28-6GE
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Vrrm
Vrms
Vdc
100
70
200
140
200
400
280
400
600
420
600
V
V
V
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Ta=25°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at rated Forward
100
If(av)
Ifsm
3.5
90
A
A
Vf
Trr
1.02
25
1.05
1.25
V
Current and 25°C
IF=3.5A
50
nS
Maximum Reverse Recovery Time (Note 1)
Typical thermal resistance junction
to ambient
72
Rθja
°C/W
(Note 2)
=25°C
=150°C
5
µA
µA
Maximum DC Reverse Current
at rated DC blocking voltage
T
T
J
J
Ir
150
Storage and Operating Temperature Range
Tstg, Tj
-55 to +150
°C
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.6
For more information please refer to the “General Part of associated Handbook”.
Rev.A1
www.gulfsemi.com
GULFSEMI [ GULF SEMICONDUCTOR ]
