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EG1JE 参数 Datasheet PDF下载

EG1JE图片预览
型号: EG1JE
PDF下载: 下载PDF文件 查看货源
内容描述: 玻璃钝化结整流电压: 50〜 1000V电流: 0.7A [GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 0.7A]
分类和应用:
文件页数/大小: 2 页 / 82 K
品牌: GULFSEMI [ GULF SEMICONDUCTOR ]
 浏览型号EG1JE的Datasheet PDF文件第2页  
EG1AE THRU EG1JE
GLASS PASSIVATED
JUNCTION RECTIFIER
VOLTAGE:50 TO 1000V
CURRENT: 0.7A
FEATURE
Low power loss
High surge capability
Glass passivated chip junction
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250℃/10sec/0.375″lead length at 5 lbs tension
A - 405
MECHANICAL DATA
Terminal:Plated axial leads solderable per
MIL-STD 202E, method 208C
Case:Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity:color band denotes cathode
Mounting position:any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 50HZ, resistive or inductive load rating at 25℃, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8″lead length at Ta =55℃
Peak Forward Surge Current 10ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25℃
Ta =125℃
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir
Trr
Cj
Rth(ja)
Tstg,Tj
EG1
AE
50
35
50
1.0
30
EG1
BE
100
70
100
EG1
DE
200
140
200
0.7
15
EG1
GE
400
280
400
EG1
JE
600
420
600
0.5
10
2.0
IF=0.5A
units
V
V
V
A
A
V
μA
μA
nS
1.2 IF=1.0A
2.0 IF=0.7A
10.0
200.0
50
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance
(Note 3)
Storage and Operating Junction Temperature
20
20.0
-55 to +150
10
pF
℃/W
Note:
1. Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted
Rev.5
www.gulfsemi.com