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SBYV26E 参数 Datasheet PDF下载

SBYV26E图片预览
型号: SBYV26E
PDF下载: 下载PDF文件 查看货源
内容描述: 烧结玻璃结表层嵌整流电压: 200〜 1400V电流: 1.0A [SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE: 200 to 1400V CURRENT: 1.0A]
分类和应用: 二极管光电二极管
文件页数/大小: 2 页 / 96 K
品牌: GULFSEMI [ GULF SEMICONDUCTOR ]
 浏览型号SBYV26E的Datasheet PDF文件第2页  
SBYV26A THRU SBYV26G
SINTERED GLASS JUNCTION
SURFACE MOUNTED RECTIFIER
VOLTAGE: 200 to 1400V
CURRENT: 1.0A
FEATURE
Ideal for surface mount automotive applications
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Operate at Ta
=55°C
with no thermal run away
Typical Ir<0.1µA
GF1/ DO-214BA
MECHANICAL DATA
Terminal: Plated axial leads solderable per MIL-STD 202E,
Method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Marking:
V26A V26B V26C V26D V26E V26F V26G
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Reverse avalanche breakdown voltage at IR
= 0.1 mA
Maximum Average Forward Rectified current
T
L
=120℃
Non-repetitive Peak Forward Current at
t=10ms half sine wave
Maximum Forward Voltage at rated Forward
Current
Non-repetitive peak reverse avalanche
energy (Note 1)
Maximum DC Reverse Current
Ta =25°C
at rated DC blocking voltage
Ta =165°C
Maximum Reverse Recovery Time
Diode Capacitance
Typical Thermal Resistance
(Note 2)
(Note 3)
(Note 4)
V
RRM
V
RMS
V
DC
V
(BR)R
I
FAV
I
FSM
V
F
E
RSM
I
R
Trr
Cj
Rth(ja)
Tstg, Tj
30
15.0
100
-65 to +175
2.5
10
5.0
150.0
75
150
SBYV
26A
200
140
200
300
min
SBYV
26B
400
280
400
500
min
SBYV
26C
600
420
600
700
min
SBYV
26D
800
560
800
900
min
1.0
30
2.15
SBYV
26E
1000
700
1000
1100
min
SBYV
26F
1200
840
1200
1300
min
SBYV
26G
1400
980
1400
1500
min
units
V
V
V
V
A
A
V
mJ
µA
nS
pF
°C
/W
°C
Storage and Operating Junction Temperature
Note: 1. R=400mA; Tj=Tjmax prior to surge; inductive load switched off
2. Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
3. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
4. Thermal Resistance from Junction to Ambient and from junction to lead, P.C.B. Mounted on 0.2×0.2″(5.0×5.0mm) copper pad areas
Rev.A1
www.gulfsemi.com