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US1J 参数 Datasheet PDF下载

US1J图片预览
型号: US1J
PDF下载: 下载PDF文件 查看货源
内容描述: 表面装载超快整流器电压: 600V电流: 1.0A [SURFACE MOUNT ULTRAFAST RECTIFIER VOLTAGE: 600V CURRENT: 1.0A]
分类和应用: 二极管光电二极管
文件页数/大小: 2 页 / 242 K
品牌: GULFSEMI [ GULF SEMICONDUCTOR ]
 浏览型号US1J的Datasheet PDF文件第2页  
US1J
SURFACE MOUNT
ULTRAFAST RECTIFIER
VOLTAGE: 600V
CURRENT: 1.0A
FEATURE
Ideal for surface mount pick and place application
Low profile package
Built-in strain relief
High surge capability
High temperature soldering guaranteed
260℃/10sec/at terminals
Glass passivated chip
Ultrafast recovery time for high efficiency
SMA/DO-214AC
MECHANICAL DATA
Terminal:Solder plated, solderable per MIL-STD-750,
Method 2026
Case: JEDEC DO-214AC molded plastic over glass
passivated chip
Polarity:Color band denotes cathode
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated,
for capacitive load, derate current by 20%)
SYMBOL
US1J
600
280
600
1.0
30.0
1.7
10.0
100.0
75
18.0
30.0
-50 to +150
units
V
V
V
A
A
V
μA
μA
nS
pF
℃/W
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8″lead length at T
L
=110℃
Peak Forward Surge Current 8.3ms single
half sine- wave superimposed on rated load
Maximum Forward Voltage at rated forward
current
Maximum DC Reverse Current
Ta =25℃
at rated DC blocking voltage
Ta =100℃
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance
(Note 3)
Storage and Operating Junction Temperature
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir
Trr
Cj
R(jl)
Tstg, Tj
Note:
1. Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to terminal mounted on 5×5mm copper pad area
1
Rev.A1
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