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1N5250B 参数 Datasheet PDF下载

1N5250B图片预览
型号: 1N5250B
PDF下载: 下载PDF文件 查看货源
内容描述: 硅ZA ????二极管 [Silicon Z–Diodes]
分类和应用: 二极管测试
文件页数/大小: 2 页 / 203 K
品牌: GXELECTRONICS [ Gaomi Xinghe Electronics Co., Ltd. ]
 浏览型号1N5250B的Datasheet PDF文件第2页  
星合电子
XINGHE ELECTRONICS
1N5221B...1N5267B
Vishay Telefunken
Silicon Z–Diodes
Features
D
D
D
D
Very sharp reverse characteristic
Very high stability
Low reverse current level
V
Z
–tolerance
±
5%
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
T
L
x
Test Conditions
75
°
C
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
200
–65...+200
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=9.5mm (3/8”), T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.1
Unit
V
Dimensions in mm
Cathode Identification
0.55 max.
technical drawings
according to DIN
specifications
94 9366
1.7 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
26 min.
3.9 max.
26 min.
1
GAOMI XINGHE ELECTRONICSCO.,LTD.     WWW.SDDZG.COM  TEL:0536-2210359