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AR254 参数 Datasheet PDF下载

AR254图片预览
型号: AR254
PDF下载: 下载PDF文件 查看货源
内容描述: 采用塑料材料进行保险商实验室分类94V- 0 [Plastic material used carries Underwriters Laboratory Classification 94V-0]
分类和应用:
文件页数/大小: 2 页 / 533 K
品牌: GXELECTRONICS [ Gaomi Xinghe Electronics Co., Ltd. ]
 浏览型号AR254的Datasheet PDF文件第2页  
星合电子
XINGHE ELECTRONICS
Features
· Plastic material used carries Underwriters Laboratory
Classification 94V-0
· Low cost construction utilizing void-free
molded plastic technique
· Low cost
· Diffused junctions
· Low leakage
· High surge capability
· High temperature soldering guaranteed :
250
for 10 seconds
AR2505 THRU AR2510
CURRENT 25.0 Amperes
VOLTAGE 50 to 1000 Volts
AR
0.185(4.7)
0.165(4.2)
0.250(6.4)
0.235(6.0)
Mechanical Data
· Case : AR molded plastic
· Terminals : Plated terminals, solderable per
MIL-STD-750, method 208
· Polarity : Color ring denotes cathode end
· Mounting Position : Any
· Weight : 0.07 ounce, 1.8 gram
0.225(5.7)
0.215(5.5)
0.410(10.4)
0.380(9.7)
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=150℃
Peak forward surge current 8.3ms half sine
wave superimposed on rated load
(JEDEC method) T
J
=150℃
Maximum instantaneous forward voltage
at 25.0A
Maximum DC reverse current
at rated DC blocking voltage
T
C
=25℃
T
C
=100℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
trr
C
J
JC
T
J
T
STG
AR
2505
50
35
50
AR
251
100
70
100
AR
252
200
140
200
AR
254
400
280
400
25.0
400
1.0
5.0
250
3.0
300
1.0
-50 to +175
AR
256
600
420
600
AR
258
800
560
800
AR
2510
1000
700
1000
Units
Volts
Volts
Volts
Amps
Amps
Volts
μA
μS
pF
℃/W
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 1) T
J
=25℃
Typical thermal resistance (Note 3)
Operating and storage temperature range
Notes:
(1) Measured at 1MHz and applied reverse voltage of 4.0V dc.
(2) Reverse recovery test conditions:I
F
=0.5A, I
R
=1.0A, Irr=0.25A
(3) Thermal resistance from junction to case, single side cooled.
1
GAOMI XINGHE ELETRONICSCO.,LTD.    WWW.SDDZG.COM     TEL:0536-2210359       QQ:464768017