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B5819W 参数 Datasheet PDF下载

B5819W图片预览
型号: B5819W
PDF下载: 下载PDF文件 查看货源
内容描述: 低存储的变化,多数载流子传导。 [Low stored change,majority carrier conduction.]
分类和应用: 存储二极管
文件页数/大小: 3 页 / 300 K
品牌: GXELECTRONICS [ Gaomi Xinghe Electronics Co., Ltd. ]
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B5817W-B5819W
特 性(FEATURES):
Extremely low V
F
.
stored change,majority carrier conduction.
power loss/high efficient
Low
Low
For
Use In Low Voltage, High Frequency Inverters.
Wheeling, And Polarity Protection Applications.
Free
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive
Peak
Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
RMS Reverse Voltage
Average Rectified Output Current
Peak Forward Surge Current @=8.3ms
Symbol
V
RSM
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
B5817W
24
B5818W
36
B5819W
48
Unit
V
20
30
40
V
14
21
1
28
V
A
I
FSM
P
d
R
θjA
T
j
,
T
stg
25
A
Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature
250
80
-65 to +125
mW
℃/W