星合电子
XINGHE ELECTRONICS
BAS21M3
High Voltage Switching Diode / DATA SHEET
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General purpose diodes
High Voltage / Fast switching devices
SOD323F Thin SMD package (Fig-1)
RoHS compliant / Green EMC
Matte Tin (Sn) Lead finish
Moisture Level Sensitivity 1
Cathode Band / Device marking
Device Marking Code
BAS21M3
S4
S4
0.65mm Typ
Fig.-1 Package. height
Absolute Maximum Ratings (
Ta = 25 ℃)
Symbol
V
RSM
V
RRM
I
FRM
I
FSM
I
O
P
D
T
J
T
STG
*1
Parameter
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current
Continuous Forward Current
Power Dissipation
Junction Temperature
Storage Temperature
*1
Value
300
250
625
4
200
250
150
-55 to +150
Units
V
V
mA
A
mA
mW
℃
℃
Pulse width = 1μs
Electrical Characteristics (
Ta = 25 ℃)
Symbol
BV
R
I
R
Parameter
Breakdown Voltage
Reverse Current
Conditions
I
R
= 100μA
V
R
= 250V
V
R
= 200V (Ta = 150
℃
)
V
F
Forward Voltage
I
F
= 100mA
I
F
= 200mA
C
T
RR
Capacitance
Reverse Recovery Time
V
R
= 0V, f = 1MHz
I
F
= I
R
= 30mA,
I
RR
= 3mA, R
L
= 100Ω
Min
250
150
100
1.0
1.25
5
50
Max
Units
V
nA
μA
V
V
pF
ns
1
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