星合电子
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
MBR1030 thru MBR10100
REVERSE VOLTAGE
- 30
to
100Volts
FORWARD CURRENT
- 10.0
Amperes
FEATURES
●
Metal of silicon rectifier , majority carrier conduction
●
Guard ring for transient protection
●
Low power loss,high efficiency
●
High current capability,low VF
●
High surge capacity
●
Plastic package has UL flammability
TO-220AC
.108
(2.75)
.413(10.5)
.374(9.5)
.153(3.9)
.146(3.7)
.187(4.7)
.148(3.8)
.055(1.4)
.047(1.2)
.270(6.9)
.230(5.8)
.610(15.5)
.583(14.8)
.04 MAX
(1.0)
classification 94V-0
●
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
MECHANICAL DATA
●
Case: TO-220AC molded plastic
●
Polarity: As marked on the body
.051
(1.3)
.043(1.1)
.032(0.8)
.102(2.6)
.091(2.3)
.157 .583(14.8)
(4.0) .531(13.5)
●Weight:
0.08ounces,2.24 grams
●
Mounting position :Any
.024(0.6)
.012(0.3)
.126
(3.2)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current ( See Fig.1)
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Peak Forward Voltage (Note1)
IF=10A @T
J
=25℃
IF=10A @T
J
=125℃
IF=20A @TJ=25℃
IF=20A @T
J
=125℃
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
@T
J
=25℃
@T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
MBR1030 MBR1040 MBR1050 MBR1060 MBR1080 MBR10100
30
21
30
40
28
40
50
35
50
10.0
60
42
60
80
56
80
100
70
100
UNIT
V
V
V
A
I
FSM
0.70
V
F
0.57
0.84
0.72
I
R
C
J
R
θJC
T
J
T
STG
0.1
15
400
2.5
150
0.80
0.70
0.95
0.85
0.1
10
0.85
0.71
-
-
0.1
6.0
1100
2.0
-55 to +150
-55 to +175
A
V
mA
pF
℃/W
℃
℃
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MH
Z
and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case.
1
ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７
GXELECTRONICS [ Gaomi Xinghe Electronics Co., Ltd. ]
