星合电子
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
MBR1035
THRU
MBR10200
Voltage Range
Current
35 to 200 Volts
10.0 Amperes
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
.412(10.5)
MAX
TO-220A
.185(4.70)
.175(4.44)
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.055(1.40)
.045(1.14)
.113(2.87)
.103(2.62)
PIN1
.16(4.06)
.14(3.56)
2
.11(2.79)
.10(2.54)
.56(14.22)
.53(13.46)
Mechanical Data
Cases: JEDEC TO-220A molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method
2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBR MBR MBR MBR MBR
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Repetitive Forward Current (Square Wave,
20KHz) at Tc=135
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Voltage Rate of Change (Rated V
R
)
Maximum Instantaneous Forward Voltage at
(Note 2)
I
F
=10A, Tc=25
O
C
I
F
=10A, Tc=125
O
C
I
F
=20A, Tc=25
O
C
I
F
=20A, Tc=125
O
C
Maximum Instantaneous Reverse Current
@ Tc =25℃at Rated DC Blocking Voltage (Note 2)
@ Tc=125℃
Typical Junction Capacitance (Note 3)
M
aximum
T
hermal
R
esistance
, J
unction
to
Case
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
dV/dt
V
F
1035
35
24
35
1045
45
31
45
1050
50
35
50
1060 1090
60
90
42
63
60
90
10
20.0
150
MBR MBR
10150 10200
150
200
105
140
150
200
Units
V
V
V
A
A
A
1.0
10,000
0.70
0.57
0.84
0.72
0.1
15.0
350
3.5
-65 to +150
-65 to +175
280
0.80
0.70
0.95
0.85
0.5
A
V/uS
0.85
0.71
-
-
0.1
6.0
200
2.0
1.05
-
-
V
I
R
Cj
R
θ
JC
T
J
T
STG
0.009
10
mA
mA
pF
℃/W
℃
℃
Operating Junction Temperature Range
Storage Temperature Range
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.
1
ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７
GXELECTRONICS [ Gaomi Xinghe Electronics Co., Ltd. ]
