星合电子
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
MBR3035CT
THRU
MBR30100CT
30.0 AMPS. Schottky Barrier Rectifiers
Voltage Range 35 to 100 Volts Current 30.0 Amperes
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
TO-220
Mechanical Data
Cases: JEDEC TO-220 molded plastic
Terminals: Leads solderable per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBR MBR
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
T
C
=130
o
C
Peak Repetitive Forward Current (Rated V
R
, Square
Wave, 20KHz) at Tc=130
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
I
F
=15A, Tc=25
O
C
I
F
=15A, Tc=125
O
C
I
F
=30A, Tc=25
O
C
I
F
=30A, Tc=125
O
C
Maximum Instantaneous Reverse Current
@ Tc=25℃ at
R
ated
DC
Blocking Voltage Per Leg
@ Tc=125℃ (Note 2)
Voltage Rate of Change, (Rated V
R
)
Maximum Thermal Resistance Per Leg (Note 3)
Typical Junction Capacitance
Operating Junction Temperature Range
Storage Temperature Range
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
3035
CT
35
24
35
3045
CT
45
31
45
MBR
3050
CT
50
35
50
30
MBR
3060
CT
60
42
60
MBR
3090
CT
90
63
90
MBR
30100
CT
100
70
100
Units
V
V
V
A
A
A
30.0
250
1.0
0.7
0.6
0.82
0.73
0.2
40
1.0
600
460
-65 to +150
-65 to +175
0.75
0.65
-
-
0.2
50
1,000
0.5
0.84
0.70
0.94
0.82
0.2
60
1.5
320
A
V
F
V
I
R
dV/dt
Rθ
JC
Cj
T
J
T
STG
mA
mA
V/uS
℃/W
pF
℃
℃
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate.
1
ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７
GXELECTRONICS [ Gaomi Xinghe Electronics Co., Ltd. ]
