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C7190-13W 参数 Datasheet PDF下载

C7190-13W图片预览
型号: C7190-13W
PDF下载: 下载PDF文件 查看货源
内容描述: 电子轰击CCD相机 [Electron Bombardment CCD Cameras]
分类和应用: 电子
文件页数/大小: 2 页 / 125 K
品牌: HAMAMATSU [ HAMAMATSU CORPORATION ]
 浏览型号C7190-13W的Datasheet PDF文件第2页  
DATA SHEET
Electron Bombardment
CCD Cameras C7190
C7190-11W, -12W , -13W
C7190-21, -23
Hamamatsu EB-CCD cameras use an innovative high gain
sensor that puts advanced technology to work to obtain high gain
images in very low light. This technology involves a special
vacuum chamber in which electrons generated at the
photocathode are accelerated by a high potential into a newly
developed, back thinned, back illunimated CCD. This direct
bombardment of the CCD by accelerated electrons provides high
gain, high resolution images, with none of the problems
associated with Micro Channel Plates which are used in other
devices. The sensor in the EB-CCD is driven by low noise circuits
and features MPP (Multi Pin Phase) technology to achieve good
S/N ratios at high gain conditions and a long service life.
Two different implementations of this technology are available.
We offer a selection between a video rate camera with both
analog and 10 bit digital output at 30 fps and a higher precision
but slower frame rate model with software selectable 10 and 12
bit digitizers included. A selection of photocathode materials is
available for tailoring these cameras to almost any application.
This new technology is ideal for demanding applications such as
genetic and bioscience research, materials research, laminar flow
applications, and many physical sciences requiring the rapid
acquisition of images at low light levels.
FEATURES
• Amplification gain of up to 1200
times (C7190-11W, -12W, -13W)
• High S/N Ratio
• Ultra-high sensitivity
• Two types are available
Dual scan digital type : C7190-11W, -12W, -13W
Video rate digital type : C7190-21, -23
SPECTRAL RESPONSE CHARACTERISTICS
60
55
50
45
40
35
30
S-20(C7190-21)
25
20
S-20(C7190-11W)
15
10
5
0
200
300
400
SENSOR STRUCTURE
Photocathode
Photon
GaAsP(C7190-13W,-23)
GaAs(C7190-12W)
Electron
Accelerate
Supply voltage
Back thinned CCD
Max.1200
times gain
Quantum efficiency (%)
500
600
700
800
900
1000
Wavelength (nm)
* This is typical, not guaranteed.