GaAsP photodiode
s
Spectral response
0.3
(Typ. Ta=25 ˚C)
G1126-02, G1127-02, G2119
s
Photo sensitivity temperature characteristic
+1.5
(Typ.)
PHOTO SENSITIVITY (A/W)
0.25
TEMPERATURE COEFFICIENT
(%/˚C)
+1.0
0.2
0.15
+0.5
0.1
0
0.05
0
190
400
600
800
-0.5
190
400
600
800
WAVELENGTH (nm)
KGPDB0034EA
WAVELENGTH (nm)
KGPDB0035EA
s
Rise time vs. load resistance
10
ms
G2119
1
ms
G1127-02
(Typ. Ta=25 ˚C, V
R
=0 V)
s
Dark current vs. reverse voltage
1
nA
(Typ. Ta=25 ˚C)
100
pA
G2119
100
µs
G1126-02
10
µs
DARK CURRENT
RISE TIME
G1127-02
10
pA
G1126-02
1
pA
1
µs
100
ns
2
10
10
3
10
4
10
5
10
6
100
fA
0.001
0.01
0.1
1
10
LOAD RESISTANCE (Ω)
KGPDB0036EA
REVERSE VOLTAGE (V)
KGPDB0037EA
HAMAMATSU [ HAMAMATSU CORPORATION ]
