PHOTODIODE
GaP photodiode
G1961, G1962, G1963
Schottky type
Features
Applications
l
Low dark current
l
High UV sensitivity
l
Analytical instruments
l
UV detection
s
General ratings / Absolute maximum ratings
Type No.
G1961
G1962
G1963
Dimensional
outline/
Window
material
➀/Q
*
➁/Q
➂/Q
Package
TO-18
TO-5
TO-8
Active area
size
(mm)
1.1 × 1.1
2.3 × 2.3
4.6 × 4.6
Effective
active
area
(mm
2
)
1.0
5.2
21
Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
V
R
Max.
(V)
(°C)
(°C)
5
-10 to +60
-20 to +70
s
Electrical and optical characteristics (Typ. Ta=25
°C
, unless otherwise noted)
Spectral
Peak
response
sensitivity
range
wavelength
λ
λp
(nm)
(nm)
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
lx
Dark
current
I
D
Max.
Terminal
Temp.
Rise time
Shunt
capacitance
coefficient
tr
resistance
Ct
of
V
R
=0 V
Rsh
V
R
=0 V
I
D
V
R
=10 mV
R
L
=1 kΩ
T
CID
f=10 kHz
(µs)
5
10
30
NEP
Type No.
G1961
G1962
190 to 550
440
G1963
* Window material Q: quartz glass
Hg
line
400 nm
λp
Min.
254 nm
(µA)
0.04
0.12 0.03
0.1 0.23
0.75
Typ.
V
4
=10 mV
(µA) (pA)
0.05 2.5
0.3
5
0.9 10
V
4
=1 V
(pA)
(times/°C)
25
50
1.11
100
Min. Typ.
(pF) (GΩ) (GΩ) (W/Hz
1/2
)
400
4
40 5.4 × 10
-15
1500
2
20 7.6 × 10
-15
5000
1
1 1.1 × 10
-14
HAMAMATSU [ HAMAMATSU CORPORATION ]
