PHOTODIODE
GaAsP photodiode
Diffusion type
Short-wavelength type photodiode
Features
Applications
l
Low dark current
l
Narrow spectral response range
l
Analytical instruments
l
UV detection
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
➀/K
➁
➁
➂/R
Package
Active area
size
(mm)
TO-18
Plastic
Plastic
Plastic
0.8 × 0.8
Effective
active
area
(mm
2
)
0.58
Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
V
R
Max.
(V)
(°C)
(°C)
5
-30 to +80
-40 to +85
G5645
G5842
G6262
G7189
s
Electrical and optical characteristics (Typ. Ta=25
°C
, unless otherwise noted)
Dark
Terminal
Photo sensitivity
Temp.
Short circuit
Rise time
current
coefficient
capacitance
S
current
tf
I
D
of
Ct
(A/W)
Isc
V
R
=0 V
V
R
=5 V
I
D
V
R
=0 V
Type No.
1000
lx
R
L
=1 kΩ
GaP
Max.
T
CID
f=10 kHz
LED
λp
Min. Typ.
560 nm
(nm)
(nm)
(nA) (nA)
(pA)
(times/°C)
(µs)
(pF)
G5645
0.28
0.05
60
90
300 to 580
470
G5842
0.06
-
-
2
260 to 400
370
50
1.07
3
80
G6262
0.2
0.05
45
65
280 to 580
470
G7189
0.25
0.02
45
65
300 to 580
470
* Window material K: borosilicate glass, R: resin coating
Spectral
Peak
response
sensitivity
range
wavelength
λ
λp
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Min. Typ.
(GΩ) (GΩ) (W/Hz
1/2
)
2.3 × 10
-15
7.6 × 10
-15
10
80
2.3 × 10
-15
2.3 × 10
-15
HAMAMATSU [ HAMAMATSU CORPORATION ]
