PHOTODIODE
InGaAs PIN photodiode
G8423/G8373/G5853 series
Long wavelength type (up to 2.6 µm)
Features
Applications
l
Long cut-off wavelength: 2.6 µm
l
Gas analysis
l
3-pin TO-18 package: low price
l
Spectrophotometer
l
Thermoelectrically cooled TO-8 package: low dark current
l
NIR (near infrared) photometry
l
Active area:
φ0.3
to
φ3
mm
s
Specifications / Absolute maximum ratings
D im ensional
Package
outline
Active
area
(mm)
φ0.3
φ0.5
φ1
φ3
φ0.3
φ1
φ3
φ0.3
φ1
φ3
Absolute maximum ratings
Thermistor TE-cooler Reverse Operating
Storage
power
allowable voltage temperature temperature
dissipation
Topr
current
Tstg
V
R
(mW)
(A)
(V)
(°C)
(°C)
Type No.
Cooling
G8423-03
G8423-05
G8373-01
G8373-03
G5853-103
G5853-11
G5853-13
G5853-203
G5853-21
G5853-23
➀
➁
➂
TO-18
TO-5
TO-8
Non-cooled
-
-
-40 to +85
-55 to +125
One-stage
TE-cooled
Two-stage
TE-cooled
1.5
0.2
1.0
2
-40 to +70
-55 to +85
➃
TO-8
s
Electrical and optical characteristics (Typ. unless otherwise noted)
M easurem ent
Spectral
Photo
Peak
condition
response se nsitivity sensitivity
range w a ve len gth
S
Element
tem perature
λp
λ
λ=λp
(°C)
G8423-03
G8423-05
G8373-01
G8373-03
G5853-103
G5853-11
G5853-13
G5853-203
G5853-21
G5853-23
25
(µm)
1.2 to 2.6
(µm)
(A/W)
Dark current
I
D
V
R
=1 V
Typ.
(µA)
2
5
15
150
0.2
1.5
15
0.1
0.8
7.5
Max.
(µA)
20
50
75
1500
2
7.5
150
1
4
75
Cut-off
freq ue ncy
fc
V
R
=1 V
R
L
=50
Ω
-3 dB
(MHz)
60
50
15
1.5
60
15
1.5
60
15
1.5
Terminal
Shunt
capacitance
re sista nce
Ct
Rsh
V
R
=1 V
V
R
=10 m V
f=1 MHz
(pF)
40
60
200
1800
40
200
1800
40
200
1800
(kΩ)
30
15
3
0.3
300
30
3
600
60
6
D
∗
λ=λp
NEP
λ=λp
Type No.
-10
1.2 to 2.57
2.3
1.1
-20
1.2 to 2.55
(cm ·H z
1/2
/W ) (W/Hz
1/2
)
7 × 10
-13
1 × 10
-12
10
5 × 10
2 × 10
-12
8 × 10
-12
3 × 10
-13
1 × 10
11
7 × 10
-13
2 × 10
-12
2 × 10
-13
2 × 10
11
5 × 10
-13
1.8 × 10
-12
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
