PHOTODIODE
InGaAs PIN photodiode
G6742 series
Surface-mount type
Features
Applications
l
Small chip carrier package
l
High reliability
l
Low price
l
Laser diode monitors
s
General ratings
Package
Active area
Parameter
G6742-003
Ceramic base
φ0.3
G6742-003
20
-40 to +85 *
-55 to +125 *
G6742-01
φ1.0
G6742-01
10
Unit
-
mm
Unit
V
°C
°C
s
Absolute maximum ratings
Parameter
Symbol
Reverse voltage
V
R
Max.
Operating
Topr
temperature
Storage temperature
Tstg
* No condensation
s
Electrical and optical characteristics (Ta=25
°C)
Parameter
Spectral response
range
Peak sensitivity
wavelength
Photo sensitivity
Dark current
Cut-off frequency
Terminal
capacitance
Shunt resistance
Detectivity
Noise equivalent
power
Symbol
λ
λp
S
I
D
fc
Ct
Rsh
D
∗
NEP
λ=1.3
µm
λ=1.55
µm
V
R
=5 V
V
R
=5 V, R
L
=50
Ω
-3 dB
f=1 MHz
V
R
=5 V
V
R
=10 mV
λ=λp
λ=λp
Condition
Min.
-
-
0.8
0.85
-
-
-
-
-
-
G6742-003
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.3
300
10
1000
5 × 10
12
4 × 10
-15
Max.
-
-
-
-
1.5
-
-
-
-
-
Min.
-
-
0.8
0.85
-
-
-
-
-
-
G6742-01
Typ.
0.9 to 1.7
1.55
0.9
0.95
1
35
90
100
5 × 10
12
2 × 10
-14
Max.
-
-
-
-
5
-
-
-
-
-
Unit
µm
µm
A/W
nA
MHz
pF
MΩ
cm · Hz
1/2
/W
W/Hz
1/2
HAMAMATSU [ HAMAMATSU CORPORATION ]
