PHOTODIODE
InGaAs PIN photodiode
G6849 series
Quadrant type
Features
G6849 :
B
2 mm quadrant element
G6849-01:
B
1 mm
quadrant element
l
Low noise
l
High reliability
Applications
l
Active area
l
Spot light position detection
l
Measurement equipment
s
General ratings
Parameter
Package
Active area
G6849
TO-5
φ2/quadrant
φ1/quadrant
G6849-01
Unit
-
mm
s
Absolute maximum ratings (Ta=25
°C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
V
R
Topr
Tstg
Value
5
-40 to +85
-55 to +125
Unit
V
°C
°C
s
Electrical and optical characteristics (Ta=25
°C,
per 1 element)
Parameter
Spectral response range
P e ak sensitivity wavelength
Photo sensitivity
Dark current
Cut-off frequency
Terminal capacitance
Shunt resistance
Detectivity
Noise equivalent power
Symbol
λ
λp
S
I
D
fc
Ct
Rsh
D
∗
NEP
λ=1.3
µm
λ=1.55
µm
V
R
=1 V
V
R
=1 V, R
L
=50
Ω
λ=1.3
µm, -3 dB
V
R
=1 V, f=1 MHz
V
R
=10 mV
λ=λp
λ=λp
Condition
Min.
-
-
G6849
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.5
30
100
50
5 × 10
12
2 × 10
-14
Max.
-
-
-
-
5
-
-
-
-
-
Min.
-
-
G6849-01
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.15
120
20
200
5 × 10
12
1 × 10
-14
Max.
-
-
-
-
1.5
-
-
-
-
-
Unit
µm
µm
A/W
nA
MHz
pF
MΩ
cm·Hz
1/2
/W
W/Hz
1/2
-
-
-
-
-
-
-
-
-
-
-
-
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
