PHOTODIODE
InGaAs PIN photodiode
G8370-81/-82/-83/-85
Low PDL (Polarization Dependence Loss)
InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low
noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from
φ1
to
φ5
mm.
Features
Applications
l
Low PDL (Polarization Dependence Loss)
l
Low noise, low dark current
l
Large active area
l
Various active area sizes available
l
Laser monitor
l
Optical power meter
l
Laser diode life test
s
Specifications / Absolute maximum ratings
Dimensional
outline/
Window
material *
1
➀/K
➁/K
➂/K
Active area
(mm)
φ1
φ2
φ3
φ5
Absolute maximum ratings
Reverse
Operating
Storage
voltage
temperature
temperature
V
R
Max.
Topr
Tstg
(V)
(°C)
(°C)
5
2
1
-40 to +85
-55 to +125
Type No.
Package
G8370-81
G8370-82
G8370-83
G8370-85
TO-18
TO-5
TO-8
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Peak
Spectral
sensitivity
response
wavelength
range
λp
Photo
sensitivity
S
Dark
current
I
D
V
R
=1 V
C ut-off
Terminal
frequency
Shunt
capacitance
fc
resistance
Ct
V
R
=1 V
Rsh
V
R
=1 V
R
L
= 50
Ω
V
R
=10 mV
f=1 M H z
-3 dB
D
∗
λ=λp
Type No.
PDL
λ=λp
NEP
λ=λp
1.3 µm
λ=λp
Min. Typ. Min. Typ. Typ. Max.
Typ. Max.
(µm)
(µm) (A/W) (A/W) (A/W) (A/W) (nA) (nA) (MHz)
(pF)
(MΩ) (mdB) (mdB) (cm· Hz
1/2
/W)
G8370-81
1
5
35
90
100
4
550
G8370-82
5
25
25
5
10 5 × 10
12
0.9 to 1.7 1.55 0.8 0.9 0.85 1.1
2
1000
G8370-83
15 75
10
0.6
3500
3
G8370-85
25 *
2
125 *
2
*1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)
*2: V
R
=0.1 V
(W/Hz
1/2
)
2 × 10
-14
4 × 10
-14
6 × 10
-14
1 × 10
-13
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
