PHOTODIODE
InGaAs PIN photodiode
G8370 series
Large active areas from
φ1
to
φ5
mm
InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes
with active areas from
φ1
to
φ5
mm.
Features
Applications
l
Low noise, low dark current
l
Large active area
l
Various active area sizes available
l
Laser monitor
l
Optical power meter
l
Laser diode life test
s
Specifications / Absolute maximum ratings
Dimensional
outline/
Window
material *
1
➀
/K
➁
/K
➂
/K
Active area
(mm)
φ1
φ2
φ3
φ5
Absolute maximum ratings
Reverse
Operating
Storage
temperature
temperature
voltage
Topr
Tstg
V
R
Max.
(V)
(°C)
(°C)
10
5
2
-40 to +85
-55 to +125
Type No.
Package
G8370-01
G8370-02
G8370-03
G8370-05
TO-18
TO-5
TO-8
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Peak
Spectral
sensitivity
response
wavelength
range
λp
Photo
sensitivity
S
Dark
current
I
D
V
R
=1 V
Max.
(nA)
5 *
2
25
75
125
Cut-off
Terminal
frequency
Shunt
capacitance
fc
resistance
Ct
V
R
=1 V
Rsh
V
R
=1 V
V
R
=10 mV
R
L
=50
Ω
f=1 MHz
-3 dB
(MHz)
35 *
2
4
2
0.6
(pF)
90 *
2
550
1000
3500
(MΩ)
100
25
10
3
D
∗
λ=λp
NEP
λ=λp
Type No.
(µm)
G8370-01
G8370-02
G8370-03
G8370-05
0.9 to 1.7
(µm)
1.55
1.3 µm
λ=λp
Typ.
(A/W) (A/W) (nA)
1 *
2
5
0.9
0.95
15
25
(cm ·H z
1/2
/W )
5 × 10
12
(W/Hz
1/2
)
2 × 10
-14
4 × 10
-14
6 × 10
-14
1 × 10
-13
*1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)
*2: V
R
=5 V
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
