PHOTODIODE
InGaAs PIN photodiode
G8376 series
Standard type
InGaAs PIN photodiodes are NIR (near infrared) detectors that feature high-speed response and low noise. Various active area sizes are
provided to meet wide applications.
Features
Applications
l
Low noise, low dark current
l
Low terminal capacitance
l
3-pin TO-18 package
l
NIR (near infrared) photometry
l
Optical communication
s
Specifications / Absolute maximum ratings
Active area
(mm)
φ0.04
φ0.08
φ0.3
φ0.5
Absolute maximum ratings
Operating
Reverse
Storage
temperature
voltage
temperature
R
Topr
V
Tstg
(V)
(°C)
(°C)
Type No.
Window material
Package
G8376-01
G8376-02
G8376-03
G8376-05
B orosilicate glass
with anti-reflective
coating (optimized
for 1.55 µ m peak)
TO-18
20
-40 to +85
-55 to +125
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Spectral
response
range
Peak
sensitivity
wavelength
λp
(µm)
1.55
T er minal
Cut-off
Shunt
frequency capacitance
Photo
NEP
resistance
D
∗
fc
Ct
sensitivity
Rsh
λ=λp
λ=λp
V
R
=2 V
S
V
R
=5 V
V
R
=10 mV
f=1 MHz
R
L
=50
Ω
-3 dB
1.3 µm
λ=λp
Typ. Max.
(c m· Hz
1/2
/ W) (W/Hz
1/2
)
(MHz)
(pF)
(A/W) (A/W) (nA) (nA)
(MΩ)
0.06 0.3
3000
0.5
10000
2 × 10
-15
0.08 0.4
2000
1
8000
2 × 10
-15
12
0.9
0.95
5 × 10
400 *
5
1000
0.3 1.5
4 × 10
-15
200 *
12
300
0.5 2.5
8 × 10
-15
Dark
current
I
D
V
R
=5 V
Type No.
(µm)
G8376-01
G8376-02
G8376-03
G8376-05
* V
R
=5 V
0.9 to 1.7
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
