PHOTODIODE
InGaAs PIN photodiode
G8421/G8371/G5851 series
Long wavelength type
Features
Applications
l
Long cut-off wavelength: 1.9 µm
l
Optical power meter
l
3-pin TO-18 package: low price
l
Gas analyzer
l
Thermoelectrically cooled TO-18 package: low dark current
l
NIR (near infrared) photometry
l
Active area:
φ0.3
to
φ3
mm
I
Specifications / Absolute maximum ratings
Type No.
Dimensional
outline/
Package
Window
material
➀
➁
➂
TO-18
TO-5
TO-8
One-stage
TE-cooled
Two-stage
TE-cooled
Cooling
Active
area
(mm)
f0.3
f0.5
f1
f3
f0.3
f1
f3
f0.3
f1
f3
Absolute maximum ratings
Thermistor TE-cooler Reverse Operating
Storage
power
allowable voltage temperature temperature
dissipation
Topr
current
Tstg
V
R
(mW)
(A)
(V)
(°C)
(°C)
-
-
-40 to +85
-55 to +125
G8421-03
G8421-05
G8371-01
G8371-03
G5851-103
G5851-11
G5851-13
G5851-203
G5851-21
G5851-23
Non-cooled
1.5
0.2
1.0
2
-40 to +70
-55 to +85
➃
TO-8
I
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Spectral
Peak
Photo
Condition
response
sensitivity
sensitivity
range
S
wavelength
Element
l
lp
l=lp
temperature
(°C)
G8421-03
G8421-05
G8371-01
G8371-03
G5851-103
G5851-11
G5851-13
G5851-203
G5851-21
G5851-23
25
(µm)
0.9 to 1.9
(µm)
(A/W)
Dark current
I
D
V
R
=1 V
Typ.
(nA)
30
50
100
2000
3
10
200
1.5
5
100
Type No.
-10
0.9 to 1.87
1.75
1.1
-20
0.9 to 1.85
Cut-off
frequency
fc
V
R
=1 V
R
L
=50
W
-3 dB
Max.
(MHz)
(nA)
300
100
500
80
1000
40
20000
3
30
100
100
40
2000
3
15
100
50
40
1000
3
Terminal
Shunt
capacitance
resistance
Ct
Rsh
V
R
=1 V
V
4
=10 mV
f=1 MHz
(pF)
8
20
80
800
8
80
800
8
80
800
(MW)
1.5
1
0.5
0.05
15
5
0.5
35
10
1
D
*
l=lp
NEP
l=lp
(cm·Hz
1/2
/W)
(W/Hz
1/2
)
9 × 10
-14
1.5 × 10
-13
5 × 10
11
2 × 10
-13
8 × 10
-13
3 × 10
-14
1.5 × 10
12
6 × 10
-14
2 × 10
-13
2 × 10
-14
2.5 × 10
12
4 × 10
-14
1.5 × 10
-13
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
