PHOTODIODE
GaAs PIN photodiode
G8522 series
High-speed response at low reverse voltage
G8522 series are high-speed PIN photodiodes developed for optical communications and are capable of GHz (gigahertz) operation even at a low
reverse voltage (2 V or less). Please contact our sales office with your specific needs.
Features
Applications
l
High-speed response at low reverse voltage
G8522-01: 3 GHz Min. (V
R
=2 V)
G8522-02: 1.9 GHz Min. (V
R
=2 V)
G8522-03: 1.5 GHz Min. (V
R
=2 V)
l
Low noise, low dark current
l
Low terminal capacitance
l
Optical fiber communications
l
Fiber channels
l
Gigabit Ethernet
s
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Reverse voltage V
R
Max.
Operating
Topr
temperature
Storage
Tstg
temperature
Value
30
-40 to +85
-55 to +125
Unit
V
°C
°C
s
Electrical and optical characteristics (Ta=25
°C)
Parameter
Active area size
Spectral
response range
Peak sensitivity
wavelength
Photo sensitivity
Dark current
Terminal
capacitance
Cut-off
frequency
Symbol
-
λ
λp
S
I
D
Ct
fc
λ=850
nm
V
R
=5 V
V
R
=2 V, f=1 MHz
V
R
=2 V, R
L
=50
Ω
λ=850
nm, -3 dB
Condition
G8522-01
Min.
Typ.
Max.
-
-
φ40
470 to
-
-
870
-
0.45
-
-
3
850
0.5
2
0.3
-
-
-
50
0.45
-
G8522-02
Min.
Typ.
Max.
-
-
φ80
470 to
-
-
870
-
0.45
-
-
1.9
850
0.5
8
0.45
-
-
-
200
0.65
-
0.45
-
-
1.5
G8522-03
Min.
Typ.
Max.
-
-
φ120
470 to
-
870
850
0.5
20
0.8
-
-
-
500
1.2
-
Unit
µm
nm
nm
A/W
pA
pF
GHz
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
