InGaAs PIN photodiode
s
Terminal capacitance vs. reverse voltage
(Typ. Ta=25
˚C
, f=1 MHz)
10 nF
G8605-15/-25
G8605-13/-23
G8605 series
(Typ. V
R
=10 mV)
s
Shunt resistance vs. element temperature
10 GΩ
TERMINAL CAPACITANCE
1 GΩ
SHUNT RESISTANCE
1 nF
G8605-12/-22
100 pF
G8605-11/-21
100 MΩ
G8605-12/-22
G8605-11/-21
10 MΩ
G8605-13/-23
G8605-15/-25
10 pF
1 MΩ
1 pF
0.01
0.1
1
10
100
100 kΩ
-40
-20
0
20
40
60
80
REVERSE VOLTAGE (V)
KIRDB0243EA
ELEMENT TEMPERATURE (˚C)
KIRDB0244EA
In applications requiring high-speed
response, the lead length should be as
short as possible to minimize the termi-
nal capacitance.
s
Thermistor temperature characteristic
10
6
s
Cooling characteristics of TE-cooler
40
(Typ. Ta=25 ˚C,
Thermal resistance of heatsink=3
˚C/W)
(Typ.)
ELEMENT TEMPERATURE
(˚C)
20
ONE-STAGE
TE-COOLED TYPE
0
RESISTANCE (Ω)
10
5
-20
10
4
TWO-STAGE
-40 TE-COOLED TYPE
10
3
-40
-20
0
20
-60
0
0.4
0.8
1.2
1.6
ELEMENT TEMPERATURE (˚C)
KIRDB0116EA
CURRENT (A)
KIRDB0231EA
s
Current vs. voltage characteristics of TE-cooler
1.6
1.4
1.2
ONE-STAGE
TE-COOLED TYPE
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0
TWO-STAGE
TE-COOLED TYPE
0
0.5
1.0
1.5
VOLTAGE (V)
KIRDB0115EA
3
HAMAMATSU [ HAMAMATSU CORPORATION ]
