PHOTODIODE
InGaAs PIN photodiode array
G8909-01
Photodiode array for DWDM monitor
Features
Applications
l
250 µm pitch, 40 ch parallel readout
l
Low cross-talk
l
Precise chip position tolerance: ±0.05 mm
l
DWDM monitor with AWG
I
General ratings
Active area
Pixel pitch
Number of elements
Parameter
Value
f0.08
250
40
Symbol
V
R
Max
.
P
in
Max.
Topr
Tstg
Remark
Value
6
10
-40 to +85
-40 to +85
Unit
mm
µm
ch
Unit
V
mV
°C
°C
I
Absolute maximum ratings
Parameter
Reverse voltage
Allowable input power
Operating temperature
Storage temperature
* In N environment or in vacuum
Parameter
Spectral response range
Photo sensitivity
Photo response non-uniformity
Dark current
Shunt resistance
Terminal capacitance
Cross-talk
*
I
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Symbol
l
S
PRNU
I
D
Rsh
Ct
-
Condition
l=1.31
µm
l=1.55
µm
V
R
=5 V
V
R
=10 mV
V
R
=5 V, f=1 MHz
V
R
=0.1 V
Min.
-
0.8
0.85
-
-
-
-
-
Typ.
0.9 to 1.7
0.9
0.95
-
0.02
8
1.4
-33
Max.
-
-
-
±5
0.2
-
-
-
Unit
µm
A/W
%
nA
GW
pF
dB
PRELIMINARY DATA
Apr. 2002
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
