PHOTODIODE
InGaAs PIN photodiode
G8941 series
Sub-mount type photodiode for LD monitor
Features
G8941-01:
φ1
mm
G8941-02:
φ0.5
mm
G8941-03:
φ0.3
mm
l
Miniature package: 2 × 2 × 1 mm
l
Precise chip position tolerance: ±0.075 mm
Applications
l
Active area
l
LD monitor
I
General rating
Active area
Parameter
G8941-01
f1
G8941-02
f0.5
G8941-03
f0.3
Unit
mm
I
Absolute maximum ratings
Parameter
Reverse voltage
Symbol
V
R
Max
.
Remark
G8941-01
10
G8941-02
20
-40 to +85
-55 to +125
G8941-03
20
Unit
V
°C
°C
Operating
Topr
temperature
*
Storage
Tstg
temperature
* In N environment or in vacuum
I
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral
response range
Photo sensitivity
Dark current
Shunt resistance
Terminal
capacitance
Cut-off
frequency
Noise equivalent
power
Detectivity
Symbol
l
S
I
D
Rsh
Ct
fc
NEP
D*
l=1.31
µm
l=1.55
µm
V
R
=5 V
V
R
=10 mV
V
R
=5 V,
f=1 MHz
V
R
=5 V,
R
L
=50
W
l=lp
l=lp
0.8
0.85
-
-
-
-
Condition
G8941-01
Min.
Typ. Max.
0.9 to 1.7
0.9
0.95
1
100
90
35
2 × 10
-14
5 × 10
12
-
-
5
-
-
-
G8941-02
Min.
Typ. Max.
0.9 to 1.7
0.8
0.85
-
-
-
-
0.9
0.95
0.5
300
12
200
8 × 10
-15
5 × 10
12
-
-
2.5
-
-
-
G8941-03
Min.
Typ. Max.
0.9 to 1.7
0.8
0.85
-
-
-
-
0.9
0.95
0.3
1000
5
400
4 × 10
-15
5 × 10
12
-
-
1.5
-
-
-
Unit
µm
A/W
nA
MW
pF
MHz
W/Hz
1/2
cmHz
1/2
/W
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
