IMAGE SENSOR
InGaAs linear image sensor
G9201 to G9204 series
Image sensor for DWDM wavelength monitor
G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These
linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,
a CDS circuit, an offset compensation circuit, a shift register and a timing generator. These sensors deliver high sensitivity and stable operation in
the near infrared spectral range. The package is hermetically sealed for high reliability and the window has an anti-reflective coating for efficient
light detection.
Signal processing circuits on the CMOS chip allow selecting a feedback capacitance (Cf) of 10 pF or 0.5 pF by supplying an external voltage. The
image sensor operates over a wide dynamic range when Cf=10 pF and delivers high gain when Cf=0.5 pF.
Features
Applications
l
Wide dynamic range
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Low noise and low dark current
l
Selectable gain
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Anti-saturation circuit
l
CDS circuit *
1
l
Offset compensation circuit
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Simple operation (by built-in timing generator) *
2
l
High resolution: 25 µm pitch (512 ch)
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Low cross-talk
l
256 ch: 1 video line
512 ch: 2 video lines
s
S e le c tio n g u id e
Ty p e N o .
G 9 2 0 1 -2 5 6 R
G 9 2 0 1 -2 5 6 S
G 9 2 0 2 -5 1 2 R
G 9 2 0 2 -5 1 2 S
G 9 2 0 3 -2 5 6 D *
4
G 9 2 0 3 -2 5 6 R
G 9 2 0 3 -2 5 6 S
G 9 2 0 4 -5 1 2 D *
4
G 9 2 0 4 -5 1 2 R
G 9 2 0 4 -5 1 2 S
C o o lin g
N o n -c o o le d
O n e -s ta g e T E -c o o le d
N o n -c o o le d
O n e -s ta g e T E -c o o le d
N o n -c o o le d
O n e -s ta g e T E -c o o le d
N o n -c o o le d
O n e -s ta g e T E -c o o le d
512
25
Num ber of
p ixe ls
256
512
P ix e l p itc h
(µ m )
50
25
l
DWDM wavelength monitor
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Optical spectrum analyzer
Accessories (Optional)
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InGaAs multichannel detector head C8061-01, C8062-01
*
3
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Multichannel detector head controller C7557
*
3
P ix e l s iz e
[µ m (H ) × µ m (V )]
50 × 250
25 × 250
S p e c tra l re s p o n s e ra n g e
(µ m )
0 .9 to 1 .7 (2 5 °C )
0 .9 to 1 .6 7 (-1 0 °C )
0 .9 to 1 .7 (2 5 °C )
0 .9 to 1 .6 7 (-1 0 °C )
0 .9 to 1 .7 (2 5 °C )
0 .9 to 1 .6 7 (-1 0 °C )
D e fe c tiv e
p ix e l
256
50
50 × 500
0
25 × 500
0 .9 to 1 .7 (2 5 °C )
0 .9 to 1 .6 7 (-1 0 °C )
*1: CDS (Correlated Double Sampling) circuit
A major source of noise in charge amplifiers is the reset noise gen-
erated when the integration capacitance is reset. A CDS circuit greatly
reduces this reset noise by holding the signal immediately after re-
set to find the noise differential.
*2: Timing generator
Different signal timings must be properly set in order to operate a
shift register. In conventional image sensor operation, external PLDs
(Programmable Logic Devices) are used to input the required timing
signals. However, G9201 to G9204 series image sensors internally
generate all timing signals on the CMOS chip just by supplying CLK
and RESET pulses. This makes it simple to set the timings.
*3: G9203-256D and G9204-512D are not available for C7557.
*4: For G9203-256D and G9204-512D specifications, see the separate
data sheets available from Hamamatsu.
s
Spectral response
1.0
T=25 ˚C
T= -10 ˚C
(Typ.)
PHOTO SENSITIVITY
(A/W)
0.5
0
0.5
1.0
1.5
2.0
WAVELENGTH
(µm)
KMIRB0011EA
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
