PHOTODIODE
InGaAs PIN photodiode
G9230-01
Uses small package with no wire
Features
Applications
l
Easy to handle since there are no wires on chip
(AnSn eutectic bonding)
Optical fibers can be brought closer to the chip
l
Miniature package: 2 × 2 × 1 mm
l
High sensitivity: 0.95 A/W Typ. (λ=1.55 µm)
l
Precise chip position tolerance: ±0.075 mm
l
LD monitor
l
Optical fiber communication
I
General / Absolute maximum ratings
Parameter
Symbol
Active area
-
Reverse voltage
V
R
Max.
Operating temperature *
Topr.
Storage temperature *
Tstg.
* In N environment or in vacuum
Parameter
Spectral response range
Photo sensitivity
Dark current
Shunt resistance
Terminal capacitance
Cut-off frequency
Noise equivalent power
Symbol
l
S
I
D
Rsh
Ct
fc
NEP
value
f0.3
10
-40 to +85
-40 to +85
Unit
mm
V
°C
°C
I
Electrical and optical characteristics (Ta=25 °C)
Condition
l=1.3
µm
l=1.55
µm
V
R
=5 V
V
R
=10 mV
V
R
=5 V, f=1 MHz
V
R
=5 V, R
L
=50
W
l=lp
Min.
-
-
0.85
-
-
-
-
-
Typ.
0.95 to 1.7
0.85
0.95
0.3
1000
5
400
4 × 10
-15
Max.
-
-
-
1.5
-
-
-
-
Unit
µm
A/W
A/W
nA
MW
pF
MHz
W/Hz
1/2
PRELIMINARY DATA
Jan. 2003
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
