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H6533 参数 Datasheet PDF下载

H6533图片预览
型号: H6533
PDF下载: 下载PDF文件 查看货源
内容描述: 光电倍增管组件 [PHOTOMULTIPLIER TUBE ASSEMBLIES]
分类和应用: 光电
文件页数/大小: 2 页 / 27 K
品牌: HAMAMATSU [ HAMAMATSU CORPORATION ]
 浏览型号H6533的Datasheet PDF文件第2页  
PHOTOMULTIPLIER TUBE
ASSEMBLIES
H6533/H6610
High Speed Response (Rise Time = 0.7ns, TTS = 0.16ns FWHM)
25mm (1 Inch) Diameter, 10 - stage, Bialkali Photocathode, Head - On Type
GENERAL
Parameter
Assembled Photomultiplier Tube
Spectral Response
Wavelength of Maximum Response
Photocathode
Window Material
Dynode
Case
Structure
Number of Stages
Material
Minimum Effective Area
Borosilicate glass
H6533
R4998
300 to 650
420
Bialkali
20
H6610
R5320
160 to 650
Unit
nm
nm
mm dia.
Synthetic silica
Linear focused
10
Magnetic shield case
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Voltage Divider Current
Average Anode Current
Ambient Temperature
Between Anode and Cathode
Description/Value
-2500
0.36
0.016
-30 to +50
Unit
Vdc
mA
mA
°C
CHARACTERISTICS (at 25
°C)
Parameter
Cathode
Luminous (2856 K)
Sensitivity
Blue (CS 5 - 58 filter)
Anode
Luminous (2856 K)
Sensitivity
Gain
Anode Dark Current (after 30 min. storage in darkness)
Anode Pulse Rise Time
Time
Electron Transit Time
Response
Transit Time Spread (T.T.S.)
Min.
60
6
100
Typ.
70
9
400
5.7
×
10
6
100
0.7
10
0.16
Max.
800
Unit
µA/lm
µA/lm-b
A/lm
nA
ns
ns
ns
NOTE:
Anode characteristics are measured with the voltage distribution ratio shown below.
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
Ratio
K
1.3
G
4.8
Dy1
1.2
Dy2
1.8
Dy3
1
Dy4
1
Dy5
1
Dy6
1
Dy7
1
Dy8
1.5
Dy9
3
Dy10
2.5
P
Supply Voltage: -2250 Vdc,
Acc to be connected to Dy7
K: Cathode,
Dy: Dynode,
P: Anode,
G: Grid
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subjected to change without notice. No patent right are granted to any of the circuits described herein.
c
1998 Hamamatsu Photonics K.K.