INFRARED PULSED LASER DIODE
L6690
■FEATURES
●High
duty ratio (DR≦2.5%)
●High
speed rise time (tr=0.5 ns typ.)
■APPLICATIONS
●Laser
rader
●Range
finder
●Excitation
light source
●Optical
trigger
●Security
barrier
Figure 1: Dimensional Outline (Unit: mm)
Glass Window
9.0
+0
-0.1
5.7
±
0.2
LD Chip
2.8
±
0.3
1.5
■ABSOLUTE
MAXIMUM RATINGS
Parameter
Pulsed Foward Current
Reverse Voltage
Pulsed Radiant Output Power
Pulse Duration (FWHM)
Duty Ratio
Operating Temperature
Storage Temperature
Symbol
I
FP
V
R
φ
ep
t
w
DR
T
op
T
stg
Value
3
2
3
130
2.5
-35 to +80
-40 to +85
Unit
A
V
W
ns
%
℃
℃
LD Cathode
PD Anode
Bottom View
Common to Case
0.45
2.54
Side View
1.0
7.0
±
0.5
(Pin Connection)
0.4
PD
5.1
±
0.5
2.4
LD
LD Cathode
PD Anode
Common to Case
■ELECTRICAL
AND OPTICAL CHARACTERISTICS (Ta=25℃)
Parameter
Pulsed Radiant Power
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
Rise Time
Beam Spread Angle : Parallel
: Vertical
Lasing Threshold Current
Monitor PD Current
Symbol
φ
ep
λp
Δλ
V
F
tr
θ//
θ⊥
Ith
Im
I
FP
=2.5A
FWHM
I
FP
=2.5A
FWHM
I
FP
=2.5A
Condition
I
FP
=2.5A
Min.
1.8
-
-
-
-
6
27
-
-
Typ.
-
870
3
2.7
0.5
8
30
0.5
0.25
Max.
-
-
-
-
-
10
33
-
-
Unit
W
nm
nm
V
ns
degree
degree
A
mA
Note: General operating conditionφ
ep
≦2
W, tw≦100 ns, Repetition frequency≦100 kHz
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
C
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
○
1998 Hamamatsu Photonics K.K.
HAMAMATSU [ HAMAMATSU CORPORATION ]
