INFRARED DETECTOR
InAs photovoltaic detector
P10090 series
Low noise, high reliability infrared detectors (for 3 µm band)
InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors, and also
feature low noise and high reliability. P10090 series is a new family of InAs photovoltaic detectors that deliver even higher sensitivity than
our convensional products (P8079 series).
Features
Applications
l
Low noise
l
High reliability
l
High detectivity (D*)
l
Available in multi-element arrays (custom product)
l
Gas analysis
l
Laser detection
l
Infrared spectrophotometry
l
Radiation thermometer
Accessories (Optional)
l
Heatsink for one-stage TE-cooled type
l
Heatsink for two-stage TE-cooled type
l
Temperature controller
l
Infrared detector module with preamp
l
Amplifiers for InAs photovoltaic detector
(custom-made product)
A3179
A3179-01
C1103-04
P4631-01
s
Specifications/Absolute maximum ratings
Dimensional
outline/
Windo w
material *
➀/S
➁/S
P10090-21
* Window material S: sapphire glass
Active
area
(mm)
TO-5
TO-8
Non-cooled
One-stage
TE-cooled
Two-stage
TE-cooled
Thermistor
power
dissipation
(mW)
-
0.2
Absolute maximum ratings
Operating
Reverse
temperature
voltage
Topr
V
R
(V)
(°C)
Storage
temperature
Tstg
(°C)
Type No.
Package
Cooling
P10090-01
P10090-11
φ1
0.5
-40 to +60
-40 to +80
s
Electrical and optical characteristics (Typ. unless otherwise noted)
Measure ment
Peak
Photo
condition
C ut-off
sensitivity
sensitivity Shunt resistance
w a velength
Ele m e nt
wavelength
S
Rsh
te m p erature
λc
λp
λ=λp
T
Min.
Typ.
(°C)
(µm)
(µm)
(A/W)
(Ω)
(Ω)
25
3.35
3.65
1.0
40
70
-10
3.30
3.55
250
400
1.2
-30
3.25
3.45
1000
1300
D
∗
(λp, 600, 1)
Min.
Typ.
1/2
(cm· Hz /W) (cm· Hz
1/2
/W)
3.0 × 10
9
4.5 × 10
9
1.0 × 10
10
1.6 × 10
10
2.0 × 10
10
3.2 × 10
10
NEP
λ=λp
Rise time
tr
V
R
=0 V
R
L
=50
Ω
0 to 63 %
(µs)
0.70
0.45
0.30
Type No.
P10090-01
P10090-11
P10090-21
(W/Hz
1/2
)
1.5 × 10
-11
5.3 × 10
-12
2.8 × 10
-12
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
