PHOTODIODE
Si PIN photodiode
S1223 series
For visible to IR, precision photometry
Features
Applications
S1223: fc=30 MHz
S1223-01: fc=20 MHz
l
Low capacitance
l
High sensitivity
l
High reliability
l
High-speed response
l
Optical measurement equipment
l
Analytical equipment, etc.
s
General ratings
Parameter
Window material
Package
Active area size
Effective active area
Symbol
-
-
A
-
S1223
2.4 × 2.8
6.6
S1223
borosilicate glass
TO-5
S1223-01
3.6 × 3.6
13
S1223-01
Unit
-
-
mm
mm
2
Unit
V
mW
°C
°C
s
Absolute maximum ratings
Parameter
Symbol
Reverse voltage
V
R
Max.
Power dissipation
P
Operating temperature
Topr
Storage temperature
Tstg
30
100
-40 to +100
-55 to +125
s
Electrical and optical characteristics (Ta=25
°C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Short circuit current
Dark current
Temp. coefficient of I
D
Cut-off frequency
Terminal capacitance
Noise equivalent power
Symbol
λ
λp
S
Condition
Min.
-
-
-
-
-
-
5
-
-
-
-
-
Isc
I
D
T
CID
fc
V
R
=20 V, -3 dB
Ct
V
R
=20 V, f=1 MHz
NEP V
R
=20 V
λ=λp
λ=660
nm
λ=780
nm
λ=830
nm
100
lx
V
R
=20 V
S1223
Typ.
320 to 1100
960
0.6
0.45
0.52
0.54
6.3
0.1
1.15
30
10
9.4 × 10
-15
Max.
-
-
-
-
-
-
-
10
-
-
-
-
Min.
-
-
-
-
-
-
10
-
-
-
-
-
S1223-01
Typ.
320 to 1100
960
0.6
0.45
0.52
0.54
13
0.2
1.15
20
20
1.3 × 10
-14
Max.
-
-
-
-
-
-
-
10
-
-
-
-
Unit
nm
nm
A/W
µA
nA
times/°C
MHz
pF
W/Hz
1/2
HAMAMATSU [ HAMAMATSU CORPORATION ]
