Si photodiode
s
Spectral response
0.7
0.6
(Typ. Ta =25 ˚C)
S1226 series
(Typ. )
s
Photo sensitivity temperature characteristic
+1.5
TEMPERATURE COEFFICIENT (%/˚C)
PHOTO SENSITIVITY (A/W)
0.5
0.4
+1.0
+0.5
0.3
0.2
S1226-BQ
0
0.1
S1226-BK
0
190
400
600
800
1000
-0.5
190
400
600
800
1000
WAVELENGTH (nm)
KSPDB0106EA
WAVELENGTH (nm)
KSPDB0030EA
s
Rise time vs. load resistance
1 ms
(Typ. Ta=25 ˚C, V
R
=0
V)
s
Dark current vs. reverse voltage
1 nA
(Typ. Ta=25 ˚C)
100
µs
S1226-8BQ/BK
S1226-44BQ/BK
100 pA
RISE TIME
10
µs
DARK CURRENT
S1226-44BQ/BK
10 pA
S1226-8BQ/BK
1
µs
S1226-18BQ/BK
100 ns
S1226-5BQ/BK
10 ns
10
2
10
3
10
4
10
5
1 pA
S1226-5BQ/BK
S1226-18BQ/BK
100 fA
0.01
0.1
1
10
LOAD RESISTANCE (Ω)
KSPDB0107EA
DARK CURRENT
KSPDB0108EB
s
Shunt resistance vs. ambient temperature
1 TΩ
100 GΩ
(Typ. V
R
=10
mV)
S1226-18BQ/BK, -5BQ/BK
SHUNT RESISTANCE
10 GΩ
1 GΩ
S1226-44BQ/BK
100 MΩ
10 MΩ
1 MΩ
100 kΩ
10 kΩ
-20
S1226-8BQ/BK
0
20
40
60
80
AMBIENT TEMPERATURE (˚C)
KSPDB0109EA
2
HAMAMATSU [ HAMAMATSU CORPORATION ]
