PHOTODIODE
Si photodiode
S1227 series
For UV to visible, precision photometry; suppressed IR sensitivity
Features
Applications
l
High UV sensitivity: QE 75 % (λ=200 nm)
l
Suppressed IR sensitivity
l
Low dark current
l
Analytical equipment
l
Optical measurement equipment, etc.
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
➀/Q
➁/R
➂/Q
➃/R
➄/Q
➅/R
➆/Q
➇/R
Package
(mm)
2.7 × 15
6 × 7.6
8.9 × 10.1
15 × 16.5
Active
area size
(mm)
1.1 × 5.9
2.4 × 2.4
5.8 × 5.8
10 × 10
Effective
active area
(mm
2
)
5.9
5.7
5
33
100
-20 to +60
-20 to +80
Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
V
R
Max.
(V)
(°C)
(°C)
S1227-16BQ
S1227-16BR
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
S1227-1010BQ
S1227-1010BR
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Spectral Peak
response sensitivity
range wavelength
λp
λ
Photo sensitivity
S
(A/W)
λp
200 nm
Short circuit
Rise Terminal Shunt
Dark
current
current Temp. time capacitance resistance
Isc
coefficient
tr
Ct
I
D
Rsh
100
lx
V
R
=10 m V
T
CID
V
R
=0 V V
R
=0 V V
R
=10 mV
He-Ne
R
L
=1 kΩ f=10 kHz (GΩ)
Min. Typ. Max.
Laser
(pF) Min. Typ.
633 nm (µA) (µA) (pA) (times/° C) (µs)
0.34
2
3.2
5
0.5
170
2 20
0.39 2.2 3.7
0.34
2
3.0
5
0.5
160
2 20
0.39 2.2 3.7
1.12
0.34
11
16
20
2
950
0.5 5
0.39
13
19
0.34
32
44
50
7
3000 0.2 2
0.39
36
53
Type No.
NEP
(nm)
(nm)
Min. Typ.
190 to 1000
S1227-16BQ
0.36 0.10 0.12
320 to 1000
S1227-16BR
0.43
-
-
190 to 1000
S1227-33BQ
0.36 0.10 0.12
320 to 1000
S1227-33BR
0.43
-
-
190 to 1000 720 0.36 0.10 0.12
S1227-66BQ
320 to 1000
S1227-66BR
0.43
-
-
S1227-1010BQ 190 to 1000
0.36 0.10 0.12
320 to 1000
S1227-1010BR
0.43
-
-
* Window material Q: quartz glass, R: resin coating
(W/Hz
1/2
)
2.5 × 10
-15
2.1 × 10
-15
2.5 × 10
-15
2.1 × 10
-15
5.0 × 10
-15
4.2 × 10
-15
8.0 × 10
-15
6.7 × 10
-15
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
