PHOTODIODE
Si photodiode
S1336 series
UV to near IR for precision photometry
Features
G
High sensitivity
G
Low capacitance
G
High reliability
Applications
G
Analytical instruments
G
Optical measurement equipment
I
General ratings / Absolute maximum ratings
Type No.
S1336-18BQ
S1336-18BK
S1336-5BQ
S1336-5BK
S1336-44BQ
S1336-44BK
S1336-8BQ
S1336-8BK
Dimensional
outline/
Window
material *
Package
(mm)
TO-18
TO-5
TO-8
Active
area size
(mm)
1.1 × 1.1
2.4 × 2.4
3.6 × 3.6
5.8 × 5.8
Effective
active area
(mm
2
)
1.2
5.7
13
33
➀
/Q
➀
/K
➁
/Q
➁
/K
➁
/Q
➁
/K
➂
/Q
➂
/K
Peak
sensi-
tivity
wave-
length
lp
Absolute maximum rating
Operating
Storage
Reverse voltage
temperature
temperature
V
4
Max.
Topr
Tstg
(V)
(°C)
(°C)
-20 to +60
-55 to +80
-40 to +100
-55 to +125
-20 to +60
-55 to +80
-40 to +100
-55 to +125
5
-20 to +60
-55 to +80
-40 to +100
-55 to +125
-20 to +60
-55 to +80
-40 to +100
-55 to +125
I
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Spectral
response
range
Photo sensitivity
S (A/W)
Short circuit
Terminal
Temp.
Dark
Rise time capaci-
current
current coeffi-
tr
Isc
tance
cient
I
,
100
lx
V
R
=0 V
Ct
V
R
=10 mV
of I
,
Type No.
R
L
=1 k9 V
R
=0 V
He-Ne
Max.
T
+1,
200 nm
Min. Typ.
f=10 kHz
l
laser
lp
633
Min. Typ.
(nm)
(nm)
nm (µA) (µA)
(pA)
(times/°C)
(µs)
(pF)
S1336-18BQ 190 to 1100
0.10 0.12
1
1.2
20
0.1
20
S1336-18BK 320 to 1100
-
-
S1336-5BQ 190 to 1100
0.10 0.12
4
5
30
0.2
65
S1336-5BK 320 to 1100
-
-
960
0.5
0.33
1.15
S1336-44BQ 190 to 1100
0.10 0.12
8
10
50
0.5
150
S1336-44BK 320 to 1100
-
-
S1336-8BQ 190 to 1100
0.10 0.12
22
28
100
1
380
S1336-8BK 320 to 1100
-
-
* Window material, K: borosilicate glass, Q: quartz glass
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Min. Typ.
(GW) (GW) (W/Hz
1/2
)
0.5
0.3
0.2
0.1
2
1
5.7 × 10
-15
8.1 × 10
-15
0.6 1.0 × 10
-14
0.4 1.3 × 10
-14
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
