PHOTODIODE
Si APD
S2381 to S2385, S5139, S8611, S3884, S4315 series
Low bias operation, for 800 nm band
Features
Applications
l
Stable operation at low bias
l
High-speed response
l
High sensitivity and low noise
s
General ratings / Absolute maximum ratings
Dimensional
outline/
Window
material *
1
➀/K
➁/L
➂/L
➀/K
➃/K
➄/K
➅/K
TO-5
TO-8
TO-18
l
Spatial light transmission
l
Rangefinder
Type No.
Package
Active area *
2
size
(mm)
φ0.2
φ0.5
φ1.0
φ1.5
φ3.0
φ5.0
Effective active
area
(mm
2
)
0.03
0.19
0.78
1.77
7.0
19.6
Absolute maximum ratings
Storage
Operating
temperature
temperature
Tstg
Topr
(°C)
(°C)
S2381
S2382
S5139
S8611
S2383
S2383-10 *
3
S3884
S2384
S2385
-20 to +85
-55 to +125
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Excess
Photo
Quantum Break do w n
Cut-off *
4
Dark
Spectral Peak *
4
Temp.
4
Terminal *
Gain
Noise
sensitivity efficiency voltage
coefficient current *
4
frequency
response sensitivity
capacitance figure *
4
V
BR
M
S
QE
I
D
range wavelength
of
fc
I
D
=100 µA
Ct
λ=800
nm
x
M=1
M=1
Type No.
V
BR
R
L
=50
Ω
λp
λ
λ=800
nm
λ=800
nm
λ=800
nm
Typ. Max.
(V) (V)
Typ. Max.
(nA) (nA)
0.05 0.5
(nm)
(nm)
(A/W)
(%)
(V/°C)
S2381
S2382
0.1
1
900
3
S5139
S8611
400 to 1000
800
0.5
75
150 200
0.65
0.3
S2383
0.2
2
600
6
3
S2383-10 *
S3884
0.5
5
400
10
S2384
1
10
120
40
3
30
40
95
S2385
*1: Window material K: borosilicate glass, L: lens type borosilicate glass
*2: Active area in which a typical gain can be obtained
*3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area
*4: Measured under conditions that the device is operated at the gain listed in the specification table
Note) The following different breakdown voltage ranges are available.
S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V)
S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V)
(MHz)
1000
(pF)
1.5
100
60
40
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
