Si photodiode
s
Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
10 TΩ
S2386-5K
1 TΩ
S2386 series
s
Shunt resistance vs. ambient temperature
(Typ. V
R
=10 mV)
1 nA
S2386-18K/-18L
S2386-45K
100 pA
S2386-8K
SHUNT RESISTANCE
100 GΩ
10 GΩ
S2386-44K
1 GΩ
100 MΩ
10 MΩ
1 MΩ
DARK CURRENT
10 pA
1 pA
100 fA
S2386-18K/-5K/-44K/-45K
10 fA
0.01
0.1
1
10
100
100 kΩ
-20
0
20
40
60
80
REVERSE VOLTAGE (V)
AMBIENT TEMPERATURE (˚C)
KSPDB0113EB
KSPDB0114EA
s
Dimensional outlines (unit: mm)
➀
S2386-18K
WINDOW
3.0 ± 0.2
5.4 ± 0.2
➁
S2386-18L
2.05 ± 0.3
3.6 ± 0.2
14
5.4 ± 0.2
3.6 ± 0.2
4.7 ± 0.1
4.7 ± 0.1
0.45
LEAD
2.3
0.45
LEAD
2.54 ± 0.2
14
2.3
2.54 ± 0.2
CONNECTED TO CASE
CONNECTED TO CASE
KSPDA0102EB
KSPDA0048EBy
3