PHOTODIODE
Si photodiode
S2387 series
For visible to IR, general-purpose photometry
Features
Applications
l
High sensitivity
l
Low dark current
l
High linearity
l
Analytical equipment
l
Optical measurement equipment, etc.
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
➀/R
➁/R
➂/R
➃/R
➄/R
Package
(mm)
2.7 × 15
6 × 7.6
8.9 × 10.1
15 × 16.5
3.0 × 40
Active
area size
(mm)
1.1 × 5.9
2.4 × 2.4
5.8 × 5.8
10 × 10
1.2 × 29.1
Effective
active area
(mm
2
)
6.4
5.7
33
100
35
Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
V
R
Max.
(V)
(°C)
(°C)
S2387-16R
S2387-33R
S2387-66R
S2387-1010R
S2387-130R
30
-20 to +60
-20 to +80
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Spectral
response
range
λ
Peak
sensi-
tivity
wave-
length
λp
(nm)
Photo sensitivity
S
(A/W)
λp
GaP
LED
Short circuit
Dark
current
current
Isc
I
D
100
lx
He-Ne
Min. Typ. V
R
=10 m V
laser
Max.
(µA) (µA)
4.4 6.0
4.4 5.8
24
31
68
91
25
32
(pA)
5
50
200
100
1.12
Terminal
Temp.
Shunt
NEP
coeffi- Rise time capaci- resistance
tance
tr
V
R
=0 V
cient
Rsh
Ct
D
of I
λ=λp
V
R
=0 V
V
R
=10 m V
T
CID
R
L
=1 kΩ V
R
=0 V
f=10 kHz Min. Typ.
(times/° C) (µs)
(pF) (GΩ) (GΩ) (W/Hz
1/2
)
1.8
10
33
11
730
2
50 9.9 × 10
-16
Type No.
(nm)
560 nm 633 nm
S2387-16R
S2387-33R
320 to 1100 960
0.58
S2387-66R
S2387-1010R
S2387-130R
* Window material, R: resin coating
0.33
0.37
4300 0.2 10 2.2 × 10
-15
12000 0.05 5 3.1 × 10
-15
5000 0.1 20 1.6 × 10
-15
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
