PHOTOTRANSISTOR
Phototransistor
S2829
Subminiature package phototransistor
S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package.
Features
Applications
l
Subminiature plastic package with lens
l
Visible-cut package
l
High sensitivity: 1.0 mA (1000
lx)
l
Tape start/end mark sensor for VTRs, cassette tape
recorders, etc.
l
Rotary encoders
l
Touch screen
s
Absolute maximum ratings (Ta=25
°C)
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector dissipation
Operating temperature
Storage temperature
Soldering
Parameter
Symbol
V
CEO
V
ECO
Ic
Pc
Topr
Tstg
-
Value
35
4
20
80
-25 to +85
-40 to +100
260 °C, 3 s, at least 2.5 mm away from package surface
Min.
0.3
-
-
-
-
-
Typ.
1.0
-
-
850
2
3
Max.
-
100
0.4
-
-
-
Unit
V
V
mA
mW
°C
°C
-
Unit
mA
nA
V
nm
µs
µs
s
Electrical and optical characteristics (Ta=25
°C)
Symbol
Condition
V
CE
=5 V, 1000
lx
Photocurrent *
Ic
V
CE
=20 V, 0
lx
Dark current
I
CEO
Collector-emitter saturation voltage
V
CE
(sat) Ic=0.3 mA, 1000
lx
Peak sensitivity wavelength
λp
Rise time
tr
Vcc=5 V, Ic=1 mA
R
L
=100
Ω
Fall time
tf
* Measured with a CIE standard A light source at 2856 K
s
Response time measurement circuit
I
F
Vcc
PULSE INPUT
90 %
V
O
10 %
V
O
R
L
tr
tf
I
F
KPTRC0001EA
HAMAMATSU [ HAMAMATSU CORPORATION ]
