PHOTODIODE
Si APD
S4402
φ1
mm quadrant APD
Features
Quadrant format on one chip with
φ1
mm active area
ensures uniform characteristics between elements.
l
Single power supply operation
Allows easy and simple operation.
Applications
l
Uniform element characteristics
l
Low-light-level detection
l
Laser beam positioning
s
General ratings
Parameter
Window material
Active area size
Effective active area
Symbol
-
A
-
Value
Borosilicate glass
φ1
mm/4
0.17 (per 1 element)
Unit
-
mm
mm
2
s
Absolute maximum ratings
Parameter
Operating temperature
Storage temperature
Symbol
Topr
Tstg
Value
-20 to +60
-55 to +100
Unit
°C
°C
s
Electrical and optical characteristics (Ta=25
°C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Quantum efficiency
Breakdown voltage
Temperature coefficient of V
BR
Dark current
Cut-off frequency
Terminal capacitance
Excess noise figure
Symbol
λ
λp
S
QE
V
BR
-
I
D
fc
Ct
x
Condition
M=100
λ=800
nm, M=1
λ=800
nm, M=1
I
R
=100 µA
M=100
M=100,
λ=800
nm
R
L
=50
Ω,
-3 dB
M=100, f=1 MHz
M=50, f=10 kHz
Io=10 nA
Min.
-
-
-
-
-
-
-
-
-
Typ.
400 to 1000
800
0.5
75
150
0.65
0.4
310
8
0.35
Max.
-
-
-
-
200
-
2.0
-
-
-
Unit
nm
nm
A/W
%
V
V/°C
nA
MHz
pF
-
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
