Si photodiode
s
Spectral response
0.7
(Typ. Ta=25 ˚C)
S5493-01, etc.
(Typ. Ta=25 ˚C, V
R
=0 V)
S5493-01
s
Rise time vs. load resistance
1 ms
0.6
PHOTO SENSITIVITY
(A/W)
S2833-01
S4011-04
S6931
100
µs
S2833-01
0.5
RISE TIME
10
µs
0.4
0.3
0.2
0.1
0
200
S4797-01
S5493-01
S5627-01
1
µs
S6931
S4011-04
100 ns
S4797-01
S5627-01
400
600
800
1000
10 ns
10
2
10
3
10
4
10
5
WAVELENGTH
(nm)
KSPDB0129EB
LOAD RESISTANCE
(Ω)
KSPDB0130EC
s
Dark current vs. reverse voltage
1 nA
(Typ. Ta=25 ˚C)
s
Shunt resistance temperature characteristics
10 TΩ
S4011-04
1 TΩ
S2833-01
(Typ. V
R
=10 mV)
100 pA
S5627-01
SHUNT RESISTANCE
DARK CURRENT
S4797-01
S6931
10 pA
S5493-01
100 GΩ
10 GΩ
1 GΩ
100 MΩ
10 MΩ
1 MΩ
100 kΩ
-20
S4797-01
S6931
S5627-01
S5493-01
1 pA
S2833-01
100 fA
S4011-04
10 fA
0.01
0.1
1
10
0
20
40
60
80
REVERSE VOLTAGE (V)
KSPDB0131EB
AMBIENT TEMPERATURE
(˚C)
KSPDB0132EB
2
HAMAMATSU [ HAMAMATSU CORPORATION ]
