PHOTODIODE
Si APD
S6045 series
Low temperature coefficient type APD for 800 nm band
Features
Applications
l
Low temperature coefficient: 0.4 V/˚C
l
High-speed response
l
High sensitivity, low noise
l
Optical fiber communications
l
Spatial light transmission
l
Rangefinder
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
1
➀
/K
➁
/K
➂
/K
{
/K
Package
Effective active
area size *
2
(mm)
φ0.2
φ0.5
φ1.0
φ1.5
φ3.0
φ5.0
Effective active
area
(mm
2
)
0.03
0.19
0.78
1.77
7.0
19.6
Absolute maximum ratings
Operating
Storage
temperature
temperature
Topr
Tstg
(°C)
(°C)
S6045-01
S6045-02
S6045-03
S6045-04
S6045-05
S6045-06
TO-18
TO-5
TO-8
-40 to +85
-55 to +125
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
S p ectra l
re sp on se
ra ng e
λ
Excess
Photo Quantum B rea kd o w n
Peak *
3
C ut-off
Dark
Tem p.
noise
Gain
sensitivity efficiency vo lta ge
Terminal
sensitivity
coefficient current *
3
frequency *
3
M
V
BR
S
QE
capacitance *
3
figure *
3
wavelength
fc
I
D
of
I
D
=100 µA
x
M=1
M=1
λ=800
nm
Ct
V
BR
R
L
=50
Ω
λp
λ=800
nm
λ=800
nm
λ=800
nm
Typ. Max.
(V) (V)
Typ.
(nA)
0.05
0.1
0.2
0.5
1
3
Max.
(nA) (MHz)
0.5
1000
1
900
2
600
5
350
10
80
30
35
Type No.
(nm)
(nm)
(A/W)
(%)
(V/°C)
S6045-01
S6045-02
S6045-03
40 0 to 1 00 0
800
0.5
75
200 300
S6045-04
S6045-05
S6045-06
*1: K: borosilicate glass
*2: Area in which a typical gain can be obtained.
*3: Values measured at a gain listed in the characteristics table.
0.4
(pF)
1.5
3
6
12
50
120
100
0.3
60
40
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
