PHOTO IC
Photo IC diode
S7183, S7184
Linear current amplification of photodiode output
S7183 and S7184 consist of a photodiode and a signal processing circuit for amplifying the photocurrent generated from the photodiode up to
1300 times. Despite a small active area, these photo ICs provide an output nearly equal to that from photodiodes with a 20 × 20 mm active area.
Both S7183 and S7184 can be used the same way as a reverse-biased photodiode, and in most cases, they deliver a sufficient output voltage by
just connecting a load resistor.
Features
Applications
l
Clear plastic package
l
Operation just as easy as using photodiodes
l
Large output current rivaling that of a phototransistor
l
Good linearity
l
Energy saving sensors for TV brightness controls, etc.
l
Light dimmers for liquid crystal panels
l
Various types of light level measurement
s
Absolute maximum ratings (Ta=25
°C)
Parameter
Reverse voltage
Photocurrent
Forward current
Power dissipation *
1
Operating temperature
Storage temperature
Value
-0.5 to 16
10
10
250
-30 to +80
-40 to +85
S7183
260 °C, 3 s, at least 2.5 mm away from package surface
Soldering
-
S7184
230 °C, 5 s,
*1: Derate power dissipation at a rate of 3.3 mW/°C above Ta=25
°C
Symbol
V
R
I
L
I
F
P
Topr
Tstg
Unit
V
mA
mA
mW
°C
°C
-
s
Electrical and optical characteristics (Ta=25
°C)
Symbol
Condition
λ
λp
V
R
I
D
V
R
=5 V
V
R
=5 V S7183, 100
lx
Photocurrent
I
L
2856 K S7184, 1000
lx
10 to 90 %, *
2
V
R
=5 V, R
L
=10 kΩ
Rise/fall time
tr, tf
λ=660
nm
*2: Rise/fall time measurement method
l
=660 nm
LED
PULSE DRIVE
90 %
V
O
10 %
0.1 µF
V
O
7.5 V
tr
tf
2.5 V
Parameter
Spectral response range
Peak sensitivity wavelength
Operating reverse voltage
Dark current
Min.
-
-
3
-
0.75
1.4
-
Typ.
300 to 1000
650
-
0.5
1.0
1.8
0.6
Max.
-
-
12
10
1.25
2.2
-
Unit
nm
nm
V
nA
mA
ms
LOAD RESISTANCE R
L
KPICC0041EA
HAMAMATSU [ HAMAMATSU CORPORATION ]
