PHOTODIODE
Si PIN photodiode
S8650
Flat surface ideal for bonding to scintillator
S8650 Si PIN photodiode has an epoxy coating window processed to have a flat surface (flatness: ±5 µm). When bonded to a scintillator, the flat
surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in between.
We also accept special orders for machining flat surfaces on other ceramic package products. Feel free to place an order with us.
Features
Applications
l
Flat epoxy coating surface ideal for bonding to scintillator
l
Scintillation X-ray detectors
Flatness: ±5 µm
l
Calorimeters, etc.
l
Active area: 10 × 10 mm
(Other sizes are also available on request.)
s
Absolute maximum ratings (Ta=25
°C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
V
R
Max.
Topr
Tstg
Value
100
-20 to +60
-20 to +80
Unit
V
°C
°C
s
Electrical and optical characteristics (Ta=25
°C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Dark current
Cut-off frequency
Terminal capacitance
Noise equivalent power
Symbol
λ
λp
S
I
D
fc
Ct
NEP
Condition
Min.
-
-
-
-
-
-
-
-
Typ.
320 to 1100
960
0.66
0.30
0.37
2
40
40
3.8 × 10
-14
Max.
-
-
-
-
-
6
-
-
-
Unit
nm
nm
A/W
A/W
A/W
nA
MHz
pF
W/Hz
1/2
λ=λp
BGO:
λ=480
nm
CsI (Tl):
λ=540
nm
V
R
=70 V
λ=780
nm, V
R
=70 V
R
L
=50
Ω,
-3 dB
V
R
=70 V, f=1 MHz
V
R
=70 V,
λ=λp
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
