Si PIN photodiode
s
Spectral response
0.8
0.7
S8729-04
QE=100 %
0.6
0.5
0.4
0.3
S8385
0.2
0.1
0
200
1 pA
0.01
S8729
S8729-10
1 nA
(Typ. Ta=25 ˚C)
10 nA
S8385/S8729 series
(Typ. Ta=25 ˚C)
s
Dark current vs. reverse voltage
PHOTO SENSITIVITY (A/W)
DARK CURRENT
S8729, S8729-04, S8729-10
S8385-04
100 pA
S8385, S8385-04
10 pA
400
600
800
1000
1200
0.1
1
10
100
WAVELENGTH (nm)
KPINB0271EB
REVERSE VOLTAGE (V)
KPINB0273EA
s
Terminal capacitance vs. reverse voltage
1 nF
(Typ. Ta=25 ˚C, f=1 MHz)
TERMINAL CAPACITANCE
100 pF
S8729, S8729-04, S8729-10
10 pF
S8385, S8385-04
1 pF
100 fF
0.1
1
10
100
REVERSE VOLTAGE (V)
KPINB0272EA
s
Dimensional outlines (unit: mm)
S8385, S8385-04, S8729, S8729-04
5.0 MAX.
(INCLUDING BURR)
4.7 *
S8729-10
1.8
5.0 MAX.
(INCLUDING BURR)
0.8
ACTIVE AREA
2 × 3.3
0.45
(2 ×) 10˚
(2 ×) 10˚
(2 ×) 5˚
4.2 ± 0.2
(INCLUDING BURR)
4.2 ± 0.2
(INCLUDING BURR)
0.45
4.0 *
2.6 ± 0.2
PHOTOSENSITIVE
SURFACE
2.0
DEPTH 0.15 MAX.
4.0 *
2.0
DEPTH 0.15 MAX.
(2 ×) 10˚± 5˚
KPINA0091EB
(0.8) (1.25)
(2 ×) 0.4
PHOTOSENSITIVE
SURFACE
5.0 MAX.
(INCLUDING BURR)
(2 ×) 4.5 ± 0.4
2.54
0.8
0.25
4.7 *
(2 ×) 10°
Tolerance unless otherwise noted: ±0.1, ±2˚
Chip position accuracy with respect to the
package dimensions marked *
X, Y≤±0.2,
θ≤±2˚
5.0 MAX.
(INCLUDING BURR)
4.7 *
(2 ×) 10°
S8385
Symbol
S8385-04
a
2×2
S8729
S8729-04
2 × 3.3
(2 ×) 5°
(2 ×) 0.5
(2 ×) 0.4
(2 ×) 5°
4.8 *
Tolerance unless otherwise noted: ±0.1, ±2˚
Chip position accuracy with respect to the
package dimensions marked *
X, Y≤±0.2,
θ≤±2˚
KPINA0090EA
2.54
4.8 *
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
(2 ×) 0.25
(2 ×) 0.5
4.9 ± 0.25
0.5
(2 ×) 5˚
ACTIVE AREA
a
1.8
4.7 *
0.5
Cat. No. KPIN1064E04
Apr. 2006 DN
2
HAMAMATSU [ HAMAMATSU CORPORATION ]
